The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition

被引：2
|
作者：
Huang, JY [1 ]
Ye, ZZ [1 ]
Qi, ZL [1 ]
Que, D [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 12期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1023/A:1010977331722
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Partially compensated SiGeC with high CV content was grown using ultra-high vacuum chemical vapor deposition (UHV/CVD) system. High resolution electron transmission microscope (HRTEM) was applied to analyze the microstructure of the samples. X-ray diffraction (XRD), Second ion mass spectroscope (FTIR) and Raman spectrum were also used to characterize the alloys. The feasibility of adjusting the strain in pseudomorphic SiGe layers by adding small amounts of carbon was confirmed. Furthermore, well-matched interface and high quality epilayers were obtained because of the presence of C.
引用
收藏
页码：1173 / 1175
页数：3
相关论文
共 50 条
  • [1] Effect of strain relief on the Si1-x-yGexCy alloys grown by ultra-high vacuum/chemical vapor deposition
    Ye, Zhizhen
    Zhang, Guoqiang
    Qi, Zhen
    Huang, Jingyun
    Lu, Huanming
    Zhao, Binghui
    Wang, Lei
    Yuan, Jun
    [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (03): : 239 - 244
  • [2] Growth and characterization of high quality Si1-x-yGexCy alloy grown by ultra-high vacuum chemical vapor deposition
    Qi, Z
    Huang, JY
    Ye, ZZ
    Lu, HM
    Chen, WH
    Zhao, BH
    Wang, L
    [J]. CHINESE PHYSICS LETTERS, 1999, 16 (10) : 750 - 752
  • [3] Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition
    Hållstedt, J
    Suvar, E
    Persson, POÅ
    Hultman, L
    Wang, YB
    Radamson, HH
    [J]. APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 46 - 50
  • [4] Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition
    Nanjing Univ, Nanjing, China
    [J]. Pan Tao Ti Hsueh Pao, 8 (650-655):
  • [5] Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition
    Calmes, C
    Bouchier, D
    Debarre, D
    Le Thanh, V
    Clerc, C
    [J]. THIN SOLID FILMS, 2003, 428 (1-2) : 150 - 155
  • [6] Growth of Si1-x-yGexCy alloy layers on Si by chemical vapor deposition using ethylene
    Zheng, YD
    Jiang, N
    Han, P
    Gu, SL
    Zhu, SM
    Jiang, RL
    Shi, Y
    Lu, WF
    Shen, B
    Zhang, R
    [J]. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 243 - 248
  • [7] Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition
    John, S
    Quinones, EJ
    Ferguson, B
    Ray, SK
    Anantharam, B
    Middlebrooks, S
    Mullins, CB
    Ekerdt, J
    Rawlings, J
    Banerjee, SK
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (12) : 4611 - 4618
  • [8] Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si Heterostructures by Low-Pressure Chemical Vapor Deposition
    Murota, Junichi
    Kikuchi, Tomohira
    Hasegawa, Jiro
    Sakuraba, Masao
    [J]. SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 245 - 254
  • [9] Heteroepitaxial Si1-x-yGexCy layer growth on (100)Si by atmospheric pressure chemical vapor deposition
    Atzmon, Z
    Bair, AE
    Alford, TL
    Chandrasekhar, D
    Smith, DJ
    Mayer, JW
    [J]. EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 117 - 122
  • [10] Ultra-high-vacuum chemical vapor deposition of heteroepitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source
    Chen, PS
    Lee, SW
    Liu, YH
    Lee, MH
    Tsai, MK
    Liu, CW
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 15 - 19
12345