Characterization of Contact Module Failure Mechanisms for SOI Technology using E-beam Inspection and In-line TEM

被引：12

作者：

Zhou, Xing J. ^{[1
]}

Patterson, Oliver D. ^{[1
]}

Lee, Woo-hyeong ^{[1
]}

Kang, Hyoung H. ^{[1
]}

Hahn, Roland ^{[2
]}

机构：

[1] IBM Semicond Res & Dev Ctr, 2070 Route 52,Mail Stop 46H, Fishkill, NY 12533 USA

[2] KLA Tencor Corp, Hopewell Jct, NY 12533 USA

来源：

2010 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE | 2010年

关键词：

D O I：

10.1109/ASMC.2010.5551467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mechanical planarization (W CMP) step. In-line transmission electron microscope (TEM) samples at select defect sites are then prepared and imaged to determine the failure mechanism. This methodology greatly enhances yield learning and provides quick feedback for lithography and etch process adjustments.

引用

页码：270 / 276

页数：7

共 13 条

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