Piezoelectric and ferroelectric characteristics of P(VDF-TrFE) thin films on Pt and ITO substrates

被引：6
|
作者：
Seo, Jeongdae [1 ,2 ,3 ]
Son, Jong Yeog [2 ,3 ]
Kim, Woo-Hee [1 ]
机构：
[1] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju 54896, South Korea
[2] Kyung Hee Univ, Dept Appl Phys, Yongin 17104, South Korea
[3] Kyung Hee Univ, Inst Nat Sci, Yongin 17104, South Korea
来源：
MATERIALS LETTERS | 2019年 / 238卷
基金：
新加坡国家研究基金会;
关键词：
P(VDF-TrFE) thin film; Piezoelectricity; Ferroelectricity; Pt substrate; ITO substrate;
D O I：
10.1016/j.matlet.2018.12.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Organic P(VDF-TrFE) 70/30 copolymer thin films were fabricated on Pt/Ti/SiO2/Si(1 1 1) and ITO/glass substrates at 140 degrees C using a spin coater. Both P(VDF-TrFE) thin films exhibited ferroelectric /beta-phase crystallinity, as confirmed by X-ray diffraction analysis. The polarization-electric hysteresis loops of the P (VDF-TrFE) thin films on the Pt and indium-tin-oxide substrates showed high remnant polarizations of 15.5 and 11.8 mu C/cm(2), respectively. Atomic force microscopy characterization showed rod-like features of the P(VDF-TrFE) thin films on both substrates, where larger rod diameters were observed on the Pt substrate compared to those fabricated on the ITO substrate. Piezoelectric force microscopy measurements further confirmed the superior piezoelectric and ferroelectric properties of the P(VDF-TrFE) thin films on the Pt substrate compared to those on the ITO substrate, which arose from the increased diameter of the rod-like features. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：237 / 240
页数：4
相关论文
共 50 条
  • [1] Switching dynamics in ferroelectric P(VDF-TrFE) thin films
    Zhao, Dong
    Katsouras, Ilias
    Asadi, Kamal
    Blom, Paul W. M.
    de Leeuw, Dago M.
    PHYSICAL REVIEW B, 2015, 92 (21)
  • [2] Polarization Mechanisms in P(VDF-TrFE) Ferroelectric Thin Films
    Choi, Andrew C.
    Pramanick, Abhijit
    Misture, Scott T.
    Paterson, Aliso R.
    Jones, Jacob L.
    Borkiewicz, Olaf C.
    Ren, Yang
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2018, 12 (10):
  • [3] Nonvolatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin Films
    Han, Dae-Hee
    Park, Byung-Eun
    FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION, 2020, 131 : 177 - 194
  • [4] Solvent Vapor Annealing of Ferroelectric P(VDF-TrFE) Thin Films
    Hu, Jinghang
    Zhang, Jianchi
    Fu, Zongyuan
    Jiang, Yulong
    Ding, Shijin
    Zhu, Guodong
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (20) : 18312 - 18318
  • [5] Switching current characteristics of ferroelectric P(VDF-TrFE) copolymer films
    Mai, Manfang
    Liu, Guohua
    Zhu, Chuanyun
    Ma, Xinzhou
    FERROELECTRICS, 2019, 550 (01) : 127 - 135
  • [6] Crystallisation behaviours of ferroelectric P(VDF-TrFE) ultrathin films on different substrates
    Wang, Chang-chun
    Shen, Qun-dong
    Kou, Bo
    MATERIALS RESEARCH INNOVATIONS, 2015, 19 : S240 - S245
  • [7] Effects of neutron irradiation on ferroelectric properties of P(VDF-TrFE) thin films
    Eunhye Shin
    Seonhyoung Kim
    Jongin Hong
    Byung-Hyuk Jun
    Journal of the Korean Physical Society, 2021, 79 : 197 - 204
  • [8] Effect of dielectric layer on ferroelectric responses of P(VDF-TrFE) thin films
    Mai, Manfang
    Zhu, Chuanyun
    Liu, Guohua
    Ma, Xinzhou
    PHYSICS LETTERS A, 2018, 382 (34) : 2372 - 2375
  • [9] Mapping surface polarization in thin films of the ferroelectric polymer P(VDF-TrFE)
    Peterson, BW
    Ducharme, S
    Fridkin, VM
    Reece, TJ
    FERROELECTRICS, 2004, 304 : 881 - 884
  • [10] Effects of neutron irradiation on ferroelectric properties of P(VDF-TrFE) thin films
    Shin, Eunhye
    Kim, Seonhyoung
    Hong, Jongin
    Jun, Byung-Hyuk
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2021, 79 (02) : 197 - 204
12345