DIELECTRIC PROPERTIES AND APPLICATIONS OF NANOCRYSTALLINE DIAMOND THIN FILMS

被引:0
|
作者
Govindaraju, N. [1 ]
Singh, R. N. [1 ]
机构
[1] Oklahoma State Univ, Sch Mat Sci & Engn, Helmerich Adv Technol Res Ctr, Tulsa, OK 74133 USA
基金
美国国家科学基金会;
关键词
POLYCRYSTALLINE DIAMOND; SINGLE-CRYSTAL; CVD DIAMOND; MICROCRYSTALLINE; CAPACITOR;
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nanocrystalline diamond (NCD) thin films, a recent process technology development, possess smooth surfaces making them attractive for high technology applications. However, little is known about the high temperature electrical properties of NCD films. Room temperature and high temperature dielectric properties of nanocrystalline and microcrystalline diamond thin films are presented. In particular, it will be demonstrated that it is possible to synthesize NCD films whose dielectric properties exceed that of standard dielectric materials at temperatures above 300 degrees C. Based on this research, we have developed novel process conditions which enable NCD deposition directly on top of devices for use as a heat conducting dielectric material. Also, recent development of multilayered diamond films with tailored morphology and structure will be presented. The implications of this research for developing devices for advanced technology applications will be presented. Our research shows that NCD is a versatile dielectric material and that it is possible to synthesize smooth, high electrical quality NCD films for high technology applications such as energy storage, power electronics, microelectromechanical systems, and chemical and biological sensor applications.
引用
收藏
页码:137 / 150
页数:14
相关论文
共 50 条
  • [1] Optical properties of nanocrystalline diamond thin films
    Achatz, P
    Garrido, JA
    Stutzmann, M
    Williams, OA
    Gruen, DM
    Kromka, A
    Steinmüller, D
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (10)
  • [2] Photoemission properties of nanocrystalline diamond thin films on silicon
    Mazellier, Jean-Paul
    Di Giola, Cyril
    Legagneux, Pierre
    Hebert, Clement
    Scorsone, Emmanuel
    Bergonzo, Philippe
    Saada, Samuel
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (03):
  • [3] Ultrananocrystalline and Nanocrystalline Diamond Thin Films for MEMS/NEMS Applications
    Sumant, Anirudha V.
    Auciello, Orlando
    Carpick, Robert W.
    Srinivasan, Sudarsan
    Butler, James E.
    [J]. MRS BULLETIN, 2010, 35 (04) : 281 - 288
  • [4] Ultrananocrystalline and Nanocrystalline Diamond Thin Films for MEMS/NEMS Applications
    Anirudha V. Sumant
    Orlando Auciello
    Robert W. Carpick
    Sudarsan Srinivasan
    James E. Butler
    [J]. MRS Bulletin, 2010, 35 : 281 - 288
  • [6] Nanocrystalline diamond as a dielectric for SOD applications
    Bevilacqua, Mose
    Tumilty, Niall
    Chaudhary, Aysha
    Ye, Haitao
    Butler, James E.
    Jackman, Richard B.
    [J]. DIAMOND ELECTRONICS - FUNDAMENTALS TO APPLICATIONS II, 2008, 1039 : 235 - +
  • [7] Protein-modified nanocrystalline diamond thin films for biosensor applications
    Andreas Härtl
    Evelyn Schmich
    Jose A. Garrido
    Jorge Hernando
    Silvia C. R. Catharino
    Stefan Walter
    Peter Feulner
    Alexander Kromka
    Doris Steinmüller
    Martin Stutzmann
    [J]. Nature Materials, 2004, 3 : 736 - 742
  • [8] Protein-modified nanocrystalline diamond thin films for biosensor applications
    Härtl, A
    Schmich, E
    Garrido, JA
    Hernando, J
    Catharino, SCR
    Walter, S
    Feulner, P
    Kromka, A
    Steinmüller, D
    Stutzmann, M
    [J]. NATURE MATERIALS, 2004, 3 (10) : 736 - 742
  • [9] High-temperature Dielectric Behavior of Nanocrystalline and Microcrystalline Diamond Thin Films
    Govindaraju, N.
    Das, D.
    Kosel, P. B.
    Singh, R. N.
    [J]. STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52), 2010, 33 (13): : 155 - 168
  • [10] Nanocrystalline diamond films for nanotechnology applications
    Forbes, IS
    Rabeau, JR
    Wilson, JIB
    John, P
    [J]. MATERIALS SCIENCE AND TECHNOLOGY, 2003, 19 (05) : 553 - 556