X-ray absorption spectroscopy of indium nitride, indium oxide, and their alloys

被引：5

作者：

T-Thienprasert, Jiraroj ^{[3
,4
]}

Rujirawat, Saroj ^{[1
,2
]}

Nukeaw, Jiti ^{[5
,6
]}

Limpijumnong, Sukit ^{[1
,2
,4
]}

机构：

[1] Suranaree Univ Technol, Sch Phys, Nakhon Ratchasima 30000, Thailand

[2] Synchrotron Light Res Inst, Nakhon Ratchasima 30000, Thailand

[3] Kasetsart Univ, Dept Phys, Fac Sci, Bangkok 10900, Thailand

[4] Commiss Higher Educ, Thailand Ctr Excellence Phys, Bangkok 10400, Thailand

[5] King Mongkuts Inst Technol Ladkrabang, Nanotechnol Res Ctr KMITL, Bangkok 10520, Thailand

[6] King Mongkuts Inst Technol Ladkrabang, Dept Appl Phys, Bangkok 10520, Thailand

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2010年 / 49卷

关键词：

XANES; First-principles calculations; Indium oxynitride; BAND-GAP; PSEUDOPOTENTIALS; EDGE; INN;

D O I：

10.1016/j.commatsci.2010.01.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To investigate the local structure of InN, In2O3 and their alloys, synchrotron (In L-3-edge) X-ray absorption near edge structures (XANES) of indium oxynitride samples with varied O contents are used in conjunction with first-principles calculations. A good agreement between the measured and simulated spectra is obtained. It is found that the spectra are sensitive to the coordination number of the In atoms, i.e., fourfold for InN-like structures and sixfold for In2O3-like structures. Moreover, the spectra are quite insensitive to the species (N or O) around In. The calculated band structures and density of states are also presented and discussed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S37 / S42

页数：6

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