Metalorganic chemical vapour deposition of CuInSe2 from copper and indium diselenocarbamates for solar cell devices

被引：0
|
作者：
McAleese, J [1 ]
O'Brien, P [1 ]
Otway, DJ [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
来源：
THIN-FILM STRUCTURES FOR PHOTOVOLTAICS | 1998年 / 485卷
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Thin film(s) of chalcopyrite CuInSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se(2)CNMe(n)Hexyl)(2) and precursors Cu(Se(2)CNMe(n)Hexyl)(2). The precursors were prepared from carbon diselenide. Films were grown on glass between 400 - 450 degrees C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.
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页码：157 / 162
页数：6
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