Microstructure study of Bi4Ti3O12-SrBi4Ti4O15 and Bi3.25La0.75Ti3O12-SrBi4Ti4O15 ceramics

被引：0
|
作者：
Su, D [1 ]
Zhu, JS [1 ]
Wang, DY [1 ]
Chan, HLW [1 ]
Choy, CL [1 ]
Wang, YN [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
来源：
ISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS | 2002年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TEM study is preformed on. mixed-layer type Bismuth compounds: B4Ti3O12-SrBi4Ti4O15 (BT-SBTi) and Bi3.25La0.75Ti3O12-SrBi4Ti4O15 (BLT-SBTi) ceramics. Meeting the prediction of space group theory, APBs and 90degrees domain wall are observed by bright- and dark-field imaging in both materials. Besides, other planer defects are found and confirmed to be stacking faults.
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页码：71 / 74
页数：4
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