Improved quantum efficiency of organic light emitting diodes with gradiently doped double emitting zone

被引：0
|
作者：
Gao, WB [1 ]
Jiang, WL
Sun, JX
Feng, J
Hou, JY
Liu, SY
机构：
[1] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130023, Peoples R China
[2] Jilin Normal Univ, Elect Informat & Engn Dept, Siping 136000, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigate electroluminescent characteristics of gradiently doped organic light-emitting diodes, which were gradiently doped in both the hole and the electron-transporting layer to form a double emitting zone. The device structure was ITO/(15nm) CuPc/(60nm)NPB:rubrene/(30nm)Alq(3):rubrene/(20nm)Alq(3)/(0.5nm)LiF/Al. We observed that charge carriers were well trapped by the dopant molecules and the main emitting zone was localized at the NPB:rubrene side close to the interface of NPB:rubrene/Alq(3):rubrene. The quantum efficiency (cd/A) was enhanced to 5.89 cd/A at 6 V. We attributed this improvement to the charge carriers trapping and the emitting of the double emitting zone.
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页码：938 / 941
页数：4
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