Gallium arsenide photodiode simulation

被引：0

作者：

Flickinger, J. ^{[1
]}

Jin, X. ^{[1
]}

Heller, E. ^{[2
]}

Chen, L. ^{[2
]}

机构：

[1] Calif Polytech State Univ San Luis Obispo, Dept Elect Engn, San Luis Obispo, CA 93407 USA

[2] RSoft Design Grp Inc, New York, NY 10562 USA

来源：

NUSOD '07: PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present Gallium arsenide (GaAs) Photodiode (PD) simulation using Rsoft LaserMOD. The detector responsivity from 600 to 900nm and frequency response at 633nm and 850nm are calculated and analyzed. Our goal for this study is to develop a PD model from the material level, which can then be used with circuit simulators. To validate our model, we simulate at 850nm first and compare to known performance at this wavelength. We use the PD data at 850nm and extract its performance at 633nm in order to use it in the 633nm experiment.

引用

页码：39 / +

页数：2

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