Effect of in situ annealed SnO2 buffer layer on structural and electrical properties of (001) SnO2/TiO2 heterostructures

被引：8

作者：

Okude, Masaki ^{[1
]}

Ueno, Kazunori ^{[1
]}

Itoh, Shun ^{[1
]}

Kikuchi, Masae ^{[1
]}

Ohtomo, Akira ^{[1
]}

Kawasaki, Masashi ^{[1
,2
,3
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 12期

关键词：

D O I：

10.1088/0022-3727/41/12/125309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied heteroepitaxial growth of SnO(2) films on (001) TiO(2) substrates by pulsed laser deposition. In order to reduce crystalline defects arising from a large lattice mismatch (3.1%), a SnO(2) buffer layer is employed. The buffer layer prepared by in situ annealing under optimized conditions exhibits an atomically flat surface and partially relaxed lattice, which play an important role in the improvement of crystallinity and electrical properties for the overgrown layer. The results are discussed based on the structural characterization by means of x-ray diffraction and transmission electron microscopy and temperature dependence of Hall mobility.

引用

页数：4

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