A Low-Power CMOS Low-Noise Amplifier for Ultra-Wideband Applications

This paper presents a low-power CMOS low-noise amplifier (LNA) for ultra-wideband (UWB) applications using a cascoded common-gate (CG) topology. The CG-LNA is fabricated by a standard 0.18-mu m CMOS process with a chip size of 0.77 mm 2. The CMOS UWB LNA dissipates 10.7 mW and achieves ISul below -10.2 dB, vertical bar S-22 vertical bar below -9.7 dB, and vertical bar S-12 vertical bar below -37.3 dB. Moreover, the power gain vertical bar S-21 vertical bar achieves a maximum of 14.5 dB at 10.42 GHz, and the noise figure is 3.6 +/- 0.2 dB at the frequency of interest. The input PldB and IIP3 is -26.8 dBm and -15.7 dBm, respectively.