A wideband low-phase-noise CMOS VCO

被引:35
|
作者
Berny, AD [1 ]
Niknejad, AM [1 ]
Meyer, RG [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley Wireless Res Ctr, Berkeley, CA 94720 USA
关键词
D O I
10.1109/CICC.2003.1249459
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CMOS VCO has been designed and fabricated in a commercial 0.25 mum CMOS process. Using a combination of switched binary-weighted capacitors and standard varactors, this VCO achieves a 28% tuning range with a control voltage ranging from 0-2 V, while maintaining a tuning sensitivity of less than 75 MHz/V over its entire frequency range. Compact choke inductors are used in place of resistors to provide a low noise bias point to the varactors. The choke inductors achieve more than 90 nH of effective inductance while consuming a die area of only 92 x 92 mum(2). The measured single-sided phase noise is -127 dBc/Hz at a 600 kHz offset from a 1.24 GHz carrier when the VCO core is drawing 3.6 mA from a 2 V supply.
引用
收藏
页码:555 / 558
页数:4
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