A 20 mW, 150 GHz InPHEMT MMIC power amplifier module

被引：27
|
作者：
Samoska, L
Peralta, A
Hu, M
Micovic, M
Schmitz, A
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] HRL Labs LLC, Malibu, CA USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2004年 / 14卷 / 02期
关键词：
HEMTs; millimeter-wave power amplifiers; MMIC amplifiers;
D O I：
10.1109/LMWC.2003.822575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a power amplifier (PA) module containing an InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.
引用
收藏
页码：56 / 58
页数：3
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