Design and analysis of a novel low dark count rate SPAD

被引：5

作者：

Yang Jia ^{[1
,2
]}

Jin Xiang-Liang ^{[1
,2
]}

Yang Hong-Jiao ^{[1
,2
]}

Tang Li-Zhen ^{[1
,2
]}

Liu Wei-Hui ^{[1
,2
]}

机构：

[1] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Peoples R China

[2] Hunan Engn Lab Microelect Optoelect & Syst Chip, Xiangtan 411105, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2016年 / 35卷 / 04期

基金：

中国国家自然科学基金;

关键词：

single-photon avalanche diode (SPAD); premature edge breakdown (PEB); complementary metal oxide semiconductor(CMOS); PHOTON AVALANCHE-DIODE; DETECTOR; DYNAMICS;

D O I：

10.11972/j.issn.1001-9014.2016.04.003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A novel low dark count rate single-photon avalanche diode (SPAD) device was designed and fabricated with the 0.18 mu m CMOS Image Sensor (CIS) technology in this paper. The device is comprised of an effective P +/LNW (light N-well doping) junction for photon detecting and a low concentration N-type diffusing circular guard-ring formed by the deep N-well diffusion. The latter prevents premature edge, breakdown (PEB) of the junction and ensures it to operate in Geiger mode. The measured results show that the SPAD achieves a low dark count rate (DCR), and the DCR is 260 Hz at an excess bias voltage of 2V for 8 mu m diameter active area structure at room temperature.

引用

页码：394 / 397

页数：4

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