Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions

被引：117
|
作者：
Ishikawa, Takayuki [1 ]
Hakamata, Shinya [1 ]
Matsuda, Ken-ichi [1 ]
Uemura, Tetsuya [1 ]
Yamamoto, Masafumi [1 ]
机构：
[1] Hokkaido Univ, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2843756
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (t(MgO)) at RT, having a period of 0.28 nm, for t(MgO) ranging from 1.8 to 3.0 nm.
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页数：3
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