A Study on the Characteristics of Inductively Coupled Plasma Nitridation Process

被引：1
|
作者：
Shin, Jong-Hyeon [1 ]
Kim, Yong-Hyun [1 ,2 ]
Park, Jong-Bae [1 ,2 ]
Kim, Dae-Chul [1 ,2 ]
Kim, Young-Woo [1 ,2 ]
Kim, Jong-Sik [1 ,2 ]
Yoon, Jung-Sik [1 ,2 ]
机构：
[1] Korea Inst Fus Energy, Plasma EI Convergence Res Ctr, Gunsan Si 54004, South Korea
[2] Korea Inst Fus Energy, Inst Plasma Technol, Fundamental Technol Res Div, Gunsan Si 54004, South Korea
来源：
COATINGS | 2022年 / 12卷 / 10期
关键词：
plasma parameters; nitridation; inductively coupled plasma (ICP); SILICON OXYNITRIDE; SIO2;
D O I：
10.3390/coatings12101372
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we investigated the nitridation of silicon oxide film surfaces using an inductively coupled plasma source. The plasma parameters and nitride film characteristics were measured under various nitrogen gas pressures and radio frequency power levels. Plasma parameters such as electron density, electron temperature, and ion density were measured and analyzed using several instruments. The nitridation characteristics of the thin films were characterized using X-ray photoelectron spectroscopy. The findings provide information on the correlation between nitridation rate and process parameters.
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页数：8
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