Electrical properties of boron nitride matrix composites: II, dielectric relaxations in boron nitride-silicon carbide composites

被引:0
|
作者
Runyan, J
Gerhardt, RA [1 ]
Ruh, R
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Universal Technol Corp, Beavercreek, OH 45432 USA
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中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A low-frequency Maxwell-Wagner relaxation, resulting from space-charge buildup, was observed when BN-SiC composites were subjected to an ac current. This paper discusses the Maxwell-Wagner relaxation and information that it reveals about the microstructure of the composite. A modified Maxwell-Wagner equation for the real part of the permittivity is used to model the data. SiC has a higher dielectric constant than that of BN, The microstructure of these composites is anisotropic, with BN platelets preferentially oriented perpendicular to the hot-pressing direction. Samples measured in this direction exhibit a lower dielectric constant than those measured parallel to the hot-pressing direction. In regard to frequency response, the permittivity of BN shows no dependence on frequency, whereas frequency dependence is seen with increasing SIC content.
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页码:1497 / 1503
页数:7
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