Tunnel investigations of superconducting films of niobium nitride and niobium gallium

被引:0
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作者
Dzhuraeyv, DR [1 ]
机构
[1] Tashkent State Univ, Fac Phys, Tashkent 700095, Uzbekistan
关键词
D O I
10.1142/9789812793676_0049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Systematic tunnel investigations are performed on films of niobium nitride with B1 structure obtained by getter, reactive cathode sputtering of a niobium target in a glow discharge in an atmosphere of nitrogen and argon. The maximum values of superconducting parameters of the films obtained are: T-C = 16.6 K (superconducting transition temperature), Delta (0)=2.84 MeV (superconducting energy gap at 0 K). The variation of adjusted gap Delta (T)/Delta (0) with adjusted temperature T/T-C was measured. In the area of voltages V beyond the gap (up to 30 MeV), a complex structure is observed for the first time in graphs of-dV/dI and d(2)I/dV(2) as a function of V (I is the current trough the tunnel junction). Films of Nb-Ga compounds are prepared with A15 structure with a gradient of composition and tunnel junctions are made from the films. It is found that under certain conditions when the composition of the film is near stoichiometric, instead of a smooth change in superconducting gap Delta and superconducting transition temperature Te along the concentration gradient, the superconducting phase is divided into areas ("domains") differing in superconducting parameters T-C and Delta. An empirical correlation is observed between Delta and T-C which in the range T-C (8.0-16 K) is near linear, not passing through 0. For a specimen with T-C approximate to 16.5 K a superconducting gap Delta = 2.79 MeV and ratio 2 Delta /kT(C) approximate to 3.92 are obtained.
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页码:377 / 384
页数:4
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