AlGaN films and AlGaN/GaN superlattices prepared by hot wall epitaxy

被引：0

作者：

Ishida, A ^{[1
]}

Kitano, M ^{[1
]}

Ose, T ^{[1
]}

Fujita, H ^{[1
]}

Hata, A ^{[1
]}

Ishino, K ^{[1
]}

Inoue, Y ^{[1
]}

Fujiyasu, H ^{[1
]}

机构：

[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 432, Japan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

hot wall epitaxy; AlGaN; superlattice; x-ray diffraction;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN films and AlGaN/GaN superlattices were prepared by hot wall epitaxy on Al2O3(0001) substrates from Ga, AI(CH3)(3) and NH3 sources. X-ray diffraction, RHEED, and optical transmission measurements were performed for the AlGaN films. Optically flat films with streak RHEED patterns were obtained up to 40% AIN content. X-ray diffraction of AlGaN/GaN superlattices were also measured, and compared with the theoretical patterns.

引用

页码：255 / 258

页数：4

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