Hole doping effect on the electronic structure of layered oxypnictide LaOMnAs

被引:2
|
作者
Higashiya, A. [1 ,2 ]
Nakagawa, K. [2 ,3 ]
Yamasaki, A. [2 ,3 ]
Nagai, K. [2 ,4 ]
Fujioka, S. [2 ,4 ]
Kanai, Y. [2 ,4 ]
Yamagami, K. [2 ,4 ]
Fujiwara, H. [2 ,4 ]
Sekiyama, A. [2 ,4 ]
Abozeed, Amina [2 ,5 ]
Kadono, T. [2 ,5 ]
Imada, S. [2 ,5 ]
Kuga, K. [2 ]
Yabashi, M. [2 ]
Tamasaku, K. [2 ]
Ishikawa, T. [2 ]
Toyama, S. [6 ]
Takase, K. [6 ]
机构
[1] Setsunan Univ, Fac Sci & Engn, Neyagawa, Osaka, Japan
[2] R1KEN SPring 8, Sayo, Japan
[3] Konan Univ, Dept Phys, Fac Sci & Engn, Kobe, Hyogo, Japan
[4] Osaka Univ, Grad Sch Engn Sci, Osaka, Japan
[5] Ritsumeikan Univ, Coll Sci & Engn, Kyoto, Japan
[6] Nihon Univ, Coll Sci & Technol, Tokyo, Japan
关键词
Hard X-ray photoelectron spectroscopy; Manganese oxide; Layered oxypnictide; PHOTOEMISSION SPECTRA;
D O I
10.1016/j.elspec.2017.01.006
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Layered oxypnictide LaOMnAs shows an antiferromagnetic insulator-to-ferromagnetic metal transition at room temperature with increasing the defect of LaO layer which induces hole doping into the MnAs layers. In order to reveal the details of the transition, we have performed hard-X-ray photoelectron spectroscopy for the insulating LaOMnAs and metallic (LaO)(0.7)MnAs. The spectral changes in the valence band, mainly composed of Mn 3d states, Mn 2p core levels, and La 3d core-levels have been observed across the transition. Our results indicated that Mn 3d state was significantly influenced by the defect of LaO layer. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:58 / 60
页数:3
相关论文
共 50 条
  • [1] Effect of hole doping on the electronic structure of T12201
    Sahrakorpi, S.
    Lin, Hsin
    Markiewicz, R. S.
    Bansil, A.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2007, 460 : 428 - 429
  • [2] Hole-doping effect on the thermoelectric properties and electronic structure of CoSi
    Lue, CS
    Kuo, YK
    Huang, CL
    Lai, WJ
    PHYSICAL REVIEW B, 2004, 69 (12):
  • [3] EFFECT OF HOLE DOPING ON THE ELECTRONIC-STRUCTURE OF ND1-XSRXTIO3
    ROBEY, SW
    HENRICH, VE
    EYLEM, C
    EICHHORN, BW
    PHYSICAL REVIEW B, 1995, 52 (04): : 2395 - 2402
  • [4] Effect of hole doping and strain modulations on electronic structure and magnetic properties in ZnO monolayer
    Chen, Lanli
    Wang, Aiping
    Xiong, Zhihua
    Shi, Siqi
    Gao, Yanfeng
    APPLIED SURFACE SCIENCE, 2019, 467 : 22 - 29
  • [5] Electronic structure of ternary palladates and effect of hole doping: a valence band photoemission spectroscopic study
    Reddy, B. H.
    Ali, Asif
    Singh, Ravi Shankar
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2021, 33 (18)
  • [6] Effect of Doping in Controlling the Structure, Reactivity, and Electronic Properties of Pristine and Ca(II)-Intercalated Layered Silicene
    Teshome, Tamiru
    Datta, Ayan
    JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (28): : 15169 - 15180
  • [7] Common features in electronic structure of the oxypnictide superconductors from photoemission spectroscopy
    Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
    不详
    不详
    不详
    Chin. Phys. Lett., 2008, 10 (3765-3768):
  • [8] Common features in electronic structure of the oxypnictide superconductors from photoemission spectroscopy
    Jia Xiao-Wen
    Liu Hai-Yun
    Zhang Wen-Tao
    Zhao Lin
    Meng Jian-Qiao
    Liu Guo-Dong
    Dong Xiao-Li
    Wu Gang
    Liu Rong-Hua
    Chen Xian-Hui
    Ren Zhi-An
    Yi Wei
    Che Guang-Can
    Chen Gen-Fu
    Wang Nan-Lin
    Wang Gui-Ling
    Zhou Yong
    Zhu Yong
    Wang Xiao-Yang
    Zhao Zhong-Xian
    Xu Zu-Yan
    Chen Chuang-Tian
    Zhou Xing-Jiang
    CHINESE PHYSICS LETTERS, 2008, 25 (10) : 3765 - 3768
  • [9] The electronic structure and doping effect of edge dislocation in iorn
    Niu, Y
    Zhao, DL
    Wang, CY
    ACTA METALLURGICA SINICA, 2001, 37 (03) : 239 - 242
  • [10] Effect of electron and hole doping on the structure of C, Si, and S nanowires
    Okano, Shinya
    Tomanek, David
    PHYSICAL REVIEW B, 2007, 75 (19):