Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

被引：150

作者：

Goto, Ken ^{[1
,2
,3
]}

Konishi, Keita ^{[3
]}

Murakami, Hisashi ^{[3
,4
]}

Kumagai, Yoshinao ^{[3
,4
]}

Monemar, Bo ^{[4
,5
]}

Higashiwaki, Masataka ^{[6
]}

Kuramata, Akito ^{[1
,2
]}

Yamakoshi, Shigenobu ^{[1
,2
]}

机构：

[1] Novel Crystal Technol Inc, 2-3-1 Hirosedai, Sayama, Saitama 3501328, Japan

[2] Tamura Corp, 2-3-1 Hirosedai, Sayama, Saitama 3501328, Japan

[3] Tokyo Univ Agr & Technol, Dept Appl Chem, 2-24-16Naka Cho, Koganei, Tokyo 1848588, Japan

[4] Tokyo Univ Agr & Technol, Inst Global Innovat Res, 2-24-16Naka Cho, Koganei, Tokyo 1848588, Japan

[5] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[6] Natl Inst Informat & Commun Technol, 4-2-1Nukui Kitamachi, Koganei, Tokyo 1848795, Japan

来源：

THIN SOLID FILMS | 2018年 / 666卷

关键词：

Halide vapor phase epitaxy; Homoepitaxy; beta-Ga2O3; Hall measurement; Electronic properties; MOLECULAR-BEAM EPITAXY; SINGLE-CRYSTALS; THIN-FILMS; GROWTH; PHOTODETECTORS;

D O I：

10.1016/j.tsf.2018.09.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon doped homoepitaxial films were grown on beta-gallium oxide (001) substrates by halide vapor phase epitaxy using gallium monochloride, oxygen and silicon tetrachloride gases as precursors. It was confirmed that the n-type carrier density at room temperature was almost equal to the doped silicon concentration, which was controlled in the range of 10(15) to 10(18) cm(-3). In the doped film with the carrier density of 1x10(16) cm(-3), the activation energy and the mobility at room temperature were 45.6 meV and 145 cm(2)/V.s, respectively. The carrier scattering mechanism in the low carrier density film was dominated by optical phonon scattering with the phonon energy of 33 meV. These results suggest that the doped homoepitaxial film grown by halide vapor phase epitaxy is a high quality film with good crystallinity comparable to bulk crystals.

引用

页码：182 / 184

页数：3

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