Analysis of neodymium rare earth element doping in PbS films for opto-electronics applications

In this novel work, we discuss the effect of neodymium doping concentration on PbS thin films coated on glass substrates by a simple nebulizer spray pyrolysis method. The XRD analysis indicated that all the prepared PbS and PbS:Nd films possess polycrystalline simple cubic crystal structure along (200) preferential orientation and the estimated crystallites size tapered from 21 to 18 nm with growing Nd concentration. It is detected that Raman spectra of all films shows four characteristic mode at 186 cm(-1), 281 cm(-1), 326 cm(-1), and 472 cm(-1) certify the formation of PbS thin films. The micrographs obtained from scanning electron microscope indicated uniform particle on the surface of the films. Energy dispersive spectroscopy and mapping analyses confirmed the elemental composition. From the linear optical study by UV-Visible spectrometer exposed the absorption level of all the PbS:Nd films was constantly maintained in the whole visible and IR spectrum which is better for optical device fabrication. The rising of Nd content showed enhancement in band-gap as 2.13 to 2.41 eV. I-V characteristics of all the prepared films were done under dark and illumination conditions. Photosensitivity of the PbS films is enhanced after Nd doping, which result in enhancement of photo current. The results suggest that the proposed strategy can be applied to prepare high-performance photosensitivity thin films.