Te-free SiSb phase change material for high data retention phase change memory application

被引：26
|
作者：
Zhang, Ting [1 ]
Song, Zhitang
Wang, Feng
Liu, Bo
Feng, Songlin
Chen, Bomy
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
[3] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 25-28期
关键词：
SiSb; phase change memory; phase change; data retention; Te-free;
D O I：
10.1143/JJAP.46.L602
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Te-free non-chalcogenide phase change material SixSb100-x (0 < x < 100) with eximious data retention has been investigated. Archives life time at 110 degrees C for Si10Sb90 and Si16Sb84 materials are 10(3) and 10(6) times longer than that of Ge2Sb2Te5, which is most widely used in research and development of phage change memory recently. The crystallization temperature for Si10Sb90 and Si16Sb84 are 191 and 225 degrees C, and the crystallization activation energy are 3.1 and 4.67 eV, respectively. These make Si10Sb90 and Si16Sb84 phase change materials promising candidates for the next-generation phase change memory. Furthermore, crystallization temperature and activation energy can be accurately controlled by adjusting silicon atomic content within the SixSb100-x material.
引用
收藏
页码：L602 / L604
页数：3
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