Electrical properties of gold at dislocations in silicon

被引：5
|
作者：
Voss, O [1 ]
Kveder, VV [1 ]
Schröter, W [1 ]
Seibt, M [1 ]
机构：
[1] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
来源：
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 6 | 2005年 / 2卷 / 06期
关键词：
D O I：
10.1002/pssc.200460516
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Deep level transient spectrocsopy has been used to study deep levels in plastically deformed n-type silicon introduced by gold impurities at concentrations differing by about one order of magnitude. A DLTS- line is observed which shows the signatures of extended localized states and emission characteristics close to that of the gold acceptor level in dislocation-free silicon. It is attributed to gold accumulated in the strain-field of dislocations. The amplitude of the C-line typically found in plastically deformed silicon shows no correlation with the gold concentration. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1847 / 1851
页数：5
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