An optimization-based design procedure for asymmetric bidirectional associative memories

被引:5
|
作者
Park, J [1 ]
Kwon, CH
Park, D
机构
[1] Korea Univ, Dept Control & Instrumentat Engn, Chochiwon 330700, Chungnam, South Korea
[2] LG Innotek Co Ltd, Yongin 449910, Kyunggi, South Korea
[3] Korea Univ, Dept Comp Sci, Chochiwon 330700, Chungnam, South Korea
来源
IEEE TRANSACTIONS ON NEURAL NETWORKS | 2001年 / 12卷 / 01期
关键词
bidirectional associative memory (BAM); generalized eigenvalue problem;
D O I
10.1109/72.896808
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
In this letter, we consider the problem of designing asymmetric bidirectional associative memories (ABAMs). Based on a newly derived theorem for the ABAM model, we propose an optimization-based design procedure for obtaining an ABAM that can store given bipolar vector pairs with certain error correction properties. Our design procedure consists of generalized eigenvalue problems, which can be efficiently solved by recently developed interior point methods. The validity of the proposed method is illustrated by a design example.
引用
收藏
页码:169 / 170
页数:2
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