Localization of tunneling electron in a potential barrier with alternating height

被引：0
|
作者：
Tkachenko, OA
Tkachenko, VA
Baksheyev, DG
Nejoh, H
机构：
来源：
QUANTUM COHERENCE AND DECOHERENCE: FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY | 1996年
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中图分类号：
O412 [相对论、场论]; O572.2 [粒子物理学];
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摘要：
It is shown by numerical calculations in multi-quantum approach that a particle tunneling through a potential barrier or an asymmetric double-barrier structure in presence of electromagnetic field can be localized inside the barrier. This is caused by transitions to an above-barrier state due to absorption of resonant photons and leads to sharp increase of transparency of thick barriers.
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页码：207 / 210
页数：4
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