A 10Gb/s burst-mode transimpedance amplifier in 0.13 μm CMOS

被引：1

作者：

Chu, Hong-Lin ^{[1
]}

Liu, Shen-Iuan ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

2007 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/ASSCC.2007.4425715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 10Gb/s burst-mode transimpedance amplifier (BMTIA), which has been fabricated in a 0.13 mu m CMOS process. For the burst-mode receivers in passive optical networks (PONs), the preamplifier has to receive the burst-mode data packages with different amplitudes and provides a short settling time which is required for high data transmission efficiency. In this paper, a 10Gb/s BMTIA is presented to achieve a wide dynamic range of 42.5dB and fast settling time within Ins. It dissipates 7.2mW excluding output buffer from a single 1.2V supply voltage.

引用

页码：400 / 403

页数：4

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