A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

被引：45
|
作者：
Park, Ji Hoon [1 ]
Kurra, Narendra [1 ]
AlMadhoun, M. N. [2 ]
Odeh, Ihab N. [2 ]
Alshareef, H. N. [1 ]
机构：
[1] King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia
[2] Saudi Basic Ind Corp SABIC, Corp Res & Innovat Ctr, Thuwal 239556900, Saudi Arabia
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 10期
关键词：
FIELD-EFFECT TRANSISTOR; THIN-FILMS; 2; PLATES; POLYMER; MEMORY; PHASE;
D O I：
10.1039/c4tc02079k
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m(-1) and a ferroelectric polarization of 5.4 mu C cm(-2).
引用
收藏
页码：2366 / 2370
页数：5
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