共 50 条
- [2] Atomic layer deposition of molybdenum nitride diffusion barriers for Cu interconnects [J]. ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 763 - 768
- [4] Characteristics of reactively sputtered niobium nitride thin films as diffusion barriers for Cu metallization [J]. Electronic Materials Letters, 2013, 9 : 593 - 597
- [5] Refractory high entropy metal sublattice nitride thin films as diffusion barriers in Cu metallizations [J]. SURFACE & COATINGS TECHNOLOGY, 2023, 473
- [8] Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects [J]. Journal of Electronic Materials, 2012, 41 : 138 - 143
- [10] Thin and low-resistivity tantalum nitride diffusion barrier and giant-grain copper interconnects for advanced ULSI metallization [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2401 - 2405