Dual poly-Si gate metal oxide semiconductor field effect transistors fabricated with high-quality chemical vapor deposition HfO2 gate dielectrics

被引：8

作者：

Lee, S

Kwong, DL

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 12期

关键词：

hafnium oxide; high K; thermal stability; CVD;

D O I：

10.1143/JJAP.42.7256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report the electrical characteristics of n- and p-metal oxide semiconductor field effect transistors (MOSFETs) fabricated using a high-quality ultrathin (equivalent oxide thickness similar to11 A) chemical vapor deposition (CVD) HfO2 gate stack with a selfaligned dual poly-Si gate process. The CVD HfO2 gate stack exhibits excellent thermal stability with the poly-Si gate up to 1050degreesC, after 30 s annealing. Good output MOS characteristics with high drive current capability, excellent subthreshold swings, and good mobility are obtained from both n- and p-MOSFETs.

引用

页码：7256 / 7258

页数：3

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