Heteroepitaxial film of silicon carbide grown on sapphire with a nitride buffer layer

Heteroepitaxial growth of single crystal Silicon Carbide < SiC > films on a novel compound substrate is discussed. Sapphire has successfully been used as substrate material for SOS structure. It shows good isolating properties. Comparing with silicon, its higher melt temperature makes this heteroepitaxial structure more sustainable for later high temperature device fabricate process. GaN and AIN are both wide band semiconductor, they are deposited on sapphire as buffer layer by the means of metal organic chemical vapor deposition < MOCVD > to decrease the lattice mismatch between the substrate and the epitaxial layer, and SiC films was grown on buffer layer using APCVD. X-ray diffraction (XRD) and scanning electron microscope (SEM) are used to study the polytypes and morphology of the film. Some hexangular etching pits with size of 1 similar to5 mum are found on the films.