The formation of stacking fault tetrahedra in Al and Cu III Growth by expanding ledges

被引：22

作者：

Wang, H. ^{[1
]}

Xu, D. S. ^{[1
]}

Yang, R. ^{[1
]}

Veyssiere, P. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China

[2] Off Natl Etud & Rech Aerosp, LEM, CNRS, F-92322 Chatillon, France

来源：

ACTA MATERIALIA | 2011年 / 59卷 / 01期

关键词：

Stacking fault tetrahedron; Growth; Ledge mechanism; Molecular dynamics simulations; Shockley dipole; VACANCY CLUSTERS; MOLECULAR-DYNAMICS; GLISSILE DISLOCATIONS; ELASTIC INTERACTION; PART I; FCC; DEFECTS; METALS; LOOPS; ENERGY;

D O I：

10.1016/j.actamat.2010.07.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ledge expansion and the concomitant growth of a stacking fault tetrahedron (SFT) are investigated in Al and Cu by molecular dynamics (MD) simulations by addition of vacancy rods with selected lengths Ledge expansion is largely governed by the site preference of vacancies on the SFT edges resulting in distinct stable ledged SFTs Both edge- and corner-facing ledge configurations may be adopted The growth of SFTs, especially large ones, is controlled by thermal agitation The mobile part of the ledges consists of a dipole of Shockley partials generally oriented in the 60 degrees mixed orientation that move in a thermally activated manner, reflecting a certain core reorganization of the Shockley dipole (C) 2010 Acta Materialia Inc Published by Elsevier Ltd All rights reserved

引用

页码：19 / 29

页数：11

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