Low-power, Wide Supply Voltage Bandgap Reference Circuit in 28nm CMOS

被引：0
|
作者：
Neri, Filippo [1 ]
Brauner, Thomas [1 ]
De Mey, Eric [1 ]
Schippel, Christian [2 ]
机构：
[1] U Blox, Zurcherstr 68, CH-8800 Thalwil, Switzerland
[2] Globalfoundries, D-01109 Dresden, Germany
来源：
2015 IEEE JORDAN CONFERENCE ON APPLIED ELECTRICAL ENGINEERING AND COMPUTING TECHNOLOGIES (AEECT) | 2015年
关键词：
MOS integrated circuits; CMOS bandgap voltage reference; operational amplifier; subthreshold;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
This paper presents an integrated bandgap reference circuit which is addressing low current consumption and a wide supply voltage range, using a current mode structure. Embedded in a sophisticated Power Management Unit (PMU) for a GNSS receiver, this bandgap reference has an output of 0.60 V and it can reach a temperature coefficient of 33 ppm/degrees C in the range from -40 degrees C to 125 degrees C. With a 1.4 V supply voltage, the power is only 3.5 mu W and the PSRR is 57 dB at DC frequency. Occupying 0.125 mm(2) chip area, this bandgap reference has been implemented in the CMOS 28 nm technology from Globalfoundries and successfully validated in the lab.
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页数：6
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