Domain Wall Gate for Magnetic Logic and Memory Applications with Perpendicular Anisotropy

Domain wall (DW) motion and pinning in magnetic nanowires play an essential role in next generation magnetic memory and logic devices. In this paper, we experimentally demonstrate a novel device, where the DW propagation in a nanowire is locally controlled by surrounding gate magnets. DW pinning is proven by experiment and further supported by micromagnetic simulations. Prospects for 3D integration are elaborated, which indicate a scaling path to below 0.01 mu m(2) footprint while having increased speed and reliability margins. The demonstrated domain wall gate enables logic operation, can act as an on-off switch in magnetic interconnects and has far reaching applications in magnetic logic and memory devices.