Multipactor discharge on a dielectric

被引:0
|
作者
Kishek, RA [1 ]
Lau, YY [1 ]
机构
[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a novel theory of a single-surface multipactor discharge on a dielectric, such as an rf window. Using a Monte Carlo simulation, we obtain the susceptibility diagram, applicable to a wide range of materials, in terms of the rf electric field and of the DC electric field that may result from dielectric charging. The electron multiplication mechanism assumes realistic yield curves of secondary electrons, including distributions of emission velocities and angles for these electrons. The susceptibility diagram thus constructed allows an immediate assessment of the range of rf power over which multipactor may be expected to occur. A simple analytic theory which corroborates the simulation results is presented.
引用
收藏
页码:3198 / 3200
页数:3
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