Photoelectrochemical Characterization of p-type InAlP on GaAs for Solar Water Splitting Application

被引：2

作者：

Hassan, Mostafa Afifi ^{[1
]}

Kang, Jin-Ho ^{[1
]}

Patil, Santosh S. ^{[1
]}

Johar, Muhammad Ali ^{[1
]}

Ryu, Sang-Wan ^{[1
]}

Park, Suk-In ^{[2
]}

Song, Jindong ^{[2
]}

机构：

[1] Chonnam Natl Univ, Dept Phys, Gwangju 61186, South Korea

[2] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2019年 / 74卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

InAlP; Photocathode; Photoelectrochemical; Water splitting; SEMICONDUCTOR; PHOTOCATHODE; PHOTOANODE; PHOTOLYSIS; COMPOSITE; HEMATITE;

D O I：

10.3938/jkps.74.116

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photoelectrochemical characteristics of p-InAlP grown on GaAs were investigated to exploit the potential of that material future as a photocathode in solar water splitting. The flat band potential was measured, and electrochemical impedance spectroscopy was performed to propose an equivalent circuit model and circuit elements fitted for charge transport analysis. Low photocatalytic activity was attributed to the band alignment with the water redox level. Since the valence band of InAlP is close to the water oxidation level, it causes inefficient hole transport to the counter electrode and the accumulation of holes in the photocathode.

引用

页码：116 / 121

页数：6

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