New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy

被引：41

作者：

Cabarrocas, PRI ^{[1
]}

Hamma, S ^{[1
]}

Hadjadj, A ^{[1
]}

Bertomeu, J ^{[1
]}

Andreu, J ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT FIS APLICADA & ELECT,E-08028 BARCELONA,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.117776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry and high resolution transmission electron microscopy have been used to characterize microcrystalline silicon films, We obtain an excellent agreement between the multilayer model used in the analysis of the optical data and the microscopy measurements. Moreover, thanks to the high resolution achieved in the microscopy measurements and to the improved optical models, two new features of the layer-by-layer deposition of microcrystalline silicon have been detected: (i) the microcrystalline films present large crystals extending from the a-Si:H substrate to the film surface, despite the sequential process in the layer-by-layer deposition; and (ii) a porous layer exists between the amorphous silicon substrate and the microcrystalline silicon film. (C) 1996 American Institute of Physics.

引用

页码：529 / 531

页数：3

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