Manganese diffusion in annealed magnetic tunnel junctions with MgO tunnel barriers

被引：14
|
作者：
Larson, D. J. [1 ,2 ]
Marquis, E. A. [2 ]
Rice, P. M. [3 ]
Prosa, T. J. [1 ]
Geiser, B. P. [1 ]
Yang, S. -H. [3 ]
Parkin, S. S. P. [3 ]
机构：
[1] Cameca Instruments Inc, Madison, WI 53711 USA
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[3] IBM Almaden Res Ctr, San Jose, CA 95120 USA
来源：
SCRIPTA MATERIALIA | 2011年 / 64卷 / 07期
关键词：
Atom probe field-ion microscopy; Magnetic thin films; Electron energy loss spectroscopy; Tunneling magnetoresistance; Interface segregation; ATOM-PROBE; SPECIMEN PREPARATION; THERMAL-STABILITY; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1016/j.scriptamat.2010.12.021
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Atom probe tomography (APT) and transmission electron microscopy (TEM) are used to characterize MgO-based magnetic tunnel junctions in as-deposited and annealed states. The annealing produced giant tunneling magnetoresistance (TMR) values of similar to 350%. Upon annealing, Mn diffuses from an IrMn exchange bias layer within the device to one interface of the tunnel barrier layer, while the TMR initially increases. TEM and APT show that Mn does not appear to diffuse into the MgO barrier, but segregates at the CoFe/MgO interface. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：673 / 676
页数：4
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