Silicon optical modulator with integrated grating couplers based on 0.18-μm complementary metal oxide semiconductor technology

被引：13
|
作者：
Xu, Haihua [1 ]
Li, Zhiyong [1 ]
Zhu, Yu [1 ]
Li, Yuntao [1 ]
Yu, Yude [1 ]
Yu, Jinzhong [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
OPTICAL ENGINEERING | 2011年 / 50卷 / 04期
基金：
中国国家自然科学基金;
关键词：
silicon photonics; modulation; grating coupler; pre-emphasis; MACH-ZEHNDER MODULATOR; CARRIER-DEPLETION; WAVE-GUIDES; COMPACT;
D O I：
10.1117/1.3560264
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A silicon p-i-n diode Mach-Zehnder optical modulator integrated with grating couplers is fabricated in 0.18-mu m complementary metal oxide semiconductor technology. The device has an ultracompact length of 200 mu m. High modulation efficiency with a figure of merit of V(pi)L = 0.22 V mm is demonstrated. A novel pre-emphasis technique is introduced to achieve high-speed modulation, and a data transmission rate of 3 Gbps is present. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3560264]
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Integrated color pixels in 0.18-μm complementary metal oxide semiconductor technology
    Catrysse, PB
    Wandell, BA
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 2003, 20 (12) : 2293 - 2306
  • [2] Complementary metal-oxide-semiconductor compatible high efficiency subwavelength grating couplers for silicon integrated photonics
    Xu, Xiaochuan
    Subbaraman, Harish
    Covey, John
    Kwong, David
    Hosseini, Amir
    Chen, Ray T.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (03)
  • [3] 3-GHz Silicon Photodiodes Integrated in a 0.18-μm CMOS Technology
    Ciftcioglu, Berkehan
    Zhang, Jie
    Zhang, Lin
    Marciante, John R.
    Zuegel, Jonathan D.
    Sobolewski, Roman
    Wu, Hlli
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 2069 - 2071
  • [4] Multichannel Biosensing and Stimulation LSI Chip Using 0.18 μm Complementary Metal-Oxide-Semiconductor Technology
    Yamaguchi, Masaya
    Shimada, Akiyoshi
    Torimitsu, Keiichi
    Nakano, Nobuhiko
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [5] 9 ps TDC based on multiple sampling in 0.18 μm complementary metal-oxide-semiconductor
    Jin, Shuowei
    Chai, Jiaxin
    Li, Jingjiao
    Yan, Aiyun
    [J]. IET CIRCUITS DEVICES & SYSTEMS, 2020, 14 (04) : 459 - 463
  • [6] Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process
    Dai, JY
    Guo, ZR
    Tee, SF
    Tay, CL
    Er, E
    Redkar, S
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (20) : 3091 - 3093
  • [7] A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
    Ansheng Liu
    Richard Jones
    Ling Liao
    Dean Samara-Rubio
    Doron Rubin
    Oded Cohen
    Remus Nicolaescu
    Mario Paniccia
    [J]. Nature, 2004, 427 : 615 - 618
  • [8] Integrated active magnetic probe in silicon-on-insulator complementary, metal-oxide-semiconductor technology
    Aoyama, Satoshi
    Kawahito, Shoji
    Yamaguchi, Masahiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 6878 - 6883
  • [9] Integrated active magnetic probe in silicon-on-insulator complementary metal-oxide-semiconductor technology
    Aoyama, Satoshi
    Kawahito, Shoji
    Yamaguchi, Masahiro
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 6878 - 6883
  • [10] RF Signal Generator Based on Time-to-Analog Converter in 0.18 μm Complementary Metal Oxide Semiconductor
    Nakano, Kazuo
    Amakawa, Shuhei
    Ishihara, Noboru
    Masu, Kazuya
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
12345