Exploring semiconductor quantum dots and wires by high resolution electron microscopy

被引：2
|
作者：
Molina, S. I. [1 ]
Galindo, P. L. [2 ]
Gonzalez, L. [3 ]
Ripalda, J. M. [3 ,4 ]
Varela, M. [4 ]
Pennycook, S. J. [4 ]
机构：
[1] Univ Cadiz, Dept Ciencia Mat & Ing Met & Q Inorgan, Campus Rio San Pedro, Puerto Real 11510, Cadiz, Spain
[2] Univ Cadiz, CASEM, Dept Lenguajes & Sistemas Informat, Puerto Real 11510, Spain
[3] Inst Microelectron Madrid CNM CSIC, Madrid 28760, Spain
[4] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
来源：
16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷
关键词：
FRINGE-PATTERN ANALYSIS; STRAIN; ATOMS; DISPLACEMENT; INFORMATION; LAYERS;
D O I：
10.1088/1742-6596/209/1/012004
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and OD nanostructures The results presented here were produced m the framework of the European Network of Excellence entitled "Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE)"
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页数：10
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