Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC - Comment

In this paper we comment on the interpretation of CV data in the presence of deep levels or interfacial layers. In order for the barrier height extracted from CV measurements to be reliable, no frequency dependence should exist at the measurement frequencies, and the slope of the 1/C-2 vs voltage curve should not be temperature dependent. This is illustrated by data from Schottky barriers on 6H-SiC. (C) 1996 American Institute of Physics.