Dependence of modulation amplitude on electron density in unidirectional lateral superlattices: The effect of the thickness of the two-dimensional electron gas

被引:10
|
作者
Endo, A [1 ]
Iye, Y [1 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
关键词
two-dimensional electron gas; AlGaAs/GaAs single heterostructure; potential modulation; lateral superlattice; electron density; thickness; back gate; illumination; commensurability oscillation;
D O I
10.1143/JPSJ.74.1792
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The amplitude V-0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n(e) by analyzing commensurability oscillation of the magnetoresistance. The electron density is varied either by applying a bias to a metallic back gate or by illumination. The amplitude decreases with increasing density, with the rate vertical bar dV(0)/dn(e)vertical bar roughly an order of magnitude larger for the former method. The result is interpreted in terms of the rate, dE(1)/d(delta E-c), of the change in the first subband level El in response to the variation of the conduction-band edge E-delta(c) above the heterointerface. The rate crucially depends on the thickness of the 2DEG.
引用
收藏
页码:1792 / 1799
页数:8
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