Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT

被引：29

作者：

Narang, Kapil ^{[1
,2
]}

Bag, Rajesh K. ^{[1
]}

Singh, Vikash K. ^{[1
]}

Pandey, Akhilesh ^{[1
]}

Saini, Sachin K. ^{[1
]}

Khan, Ruby ^{[1
]}

Arora, Aman ^{[1
]}

Padmavati, M. V. G. ^{[1
]}

Tyagi, Renu ^{[1
]}

Singh, Rajendra ^{[2
]}

机构：

[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

[2] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2020年 / 815卷

关键词：

AlGaN; V/III molar ratio; Surface morphology; 2DEG; CHEMICAL-VAPOR-DEPOSITION; GROWTH-RATE; PERFORMANCE; CARBON; STATES; LAYER; HETEROSTRUCTURES; GANHEMTS; DEFECTS; IMPACT;

D O I：

10.1016/j.jallcom.2019.152283

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

AlGaN/GaN high electron mobility transistor (HEMT) epi-structures were grown on SiC substrate using MOVPE. In this paper, the growth of high-quality AlGaN epi-layer in AlGaN/GaN HEMT is reported. The optimization was carried out to improve surface morphology and quality of the AlGaN epi-layer to get high 2DEG (two-dimensional electron gas) properties of the HEMT structure. For this optimization, AlGaN epi-layers were grown with different Will molar ratio. It was found that both lower and higher V/III molar ratios result in the step flow surface morphology of AlGaN. However, a higher Will molar ratio results in reduced surface roughness, improved quality of AlGaN, and excellent 2DEG properties of HEMT epi-structure. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：6

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