High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes

被引:20
|
作者
Pouladi, Sara [1 ,3 ]
Rathi, Monika [2 ,3 ,4 ]
Khatiwada, Devendra [1 ,3 ]
Asadirad, Mojtaba [1 ]
Oh, Seung Kyu [2 ,3 ,4 ]
Dutta, Pavel [2 ,3 ,4 ]
Yao, Yao [1 ,3 ]
Gao, Ying [2 ,3 ]
Sun, Sicong [1 ,3 ]
Li, Yongkuan [1 ,3 ]
Shervin, Shahab [2 ,3 ]
Lee, Keon-Hwa [2 ]
Selvamanickam, Venkat [1 ,2 ,3 ,4 ]
Ryou, Jae-Hyun [1 ,2 ,3 ,4 ]
机构
[1] Univ Houston, Mat Sci & Engn Program, Houston, TX 77204 USA
[2] Univ Houston, Dept Mech Engn, 4726 Calhoun Rd,Rm N207, Houston, TX 77204 USA
[3] Univ Houston, Adv Mfg Inst, Houston, TX 77204 USA
[4] Univ Houston, TcSUH, Houston, TX 77204 USA
来源
PROGRESS IN PHOTOVOLTAICS | 2019年 / 27卷 / 01期
关键词
direct deposition; flexible devices; photovoltaic solar cells; roll-to-roll process; single-crystal-like semiconductor materials; GAAS; SILICON; PASSIVATION;
D O I
10.1002/pip.3070
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This study demonstrates the first flexible single-junction III-V photovoltaic solar cells (SCs) based on single-crystal-like gallium arsenide (GaAs) thin films on a low-cost metal substrate by direct and continuous deposition, which can bypass expensive single crystal wafer fabrication. The two-dimensional modeling of the GaAs SC is developed and used to study feasibility of single-crystal-like GaAs thin films for high performance SC devices. A promising SC device performance characteristic with an open-circuit voltage of 560 mV and short circuit current of 19.4 mA/cm(2), resulting in a conversion efficiency of similar to 7.6%, is demonstrated.
引用
收藏
页码:30 / 36
页数:7
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