The enhancement of NO detection by doping strategies on monolayer MoS2

被引:38
|
作者
Ding, Kaining [1 ]
Lin, Yihua [1 ]
Huang, Mengyue [1 ]
机构
[1] Fuzhou Univ, Dept Chem, Res Inst Photocatalysis, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350108, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
MoS2; monolayer; Doped system; Electronic structure; Gas sensor; FACILE SYNTHESIS; GAS; ADSORPTION; HYDROGENATION; NANOSHEETS; PRESSURE; CRYSTAL; OXYGEN; DEFECT; FILMS;
D O I
10.1016/j.vacuum.2016.05.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First principles calculations are carried out to investigate the reactivities of pure monolayer MoS2 nanosheet doped with non-metal elements X (X = B, P, Cl) in the presence of NO. All doped systems exhibit strong effects on NO, especially for the B- and P-doped MoS2 cases, whereas the pure MoS2 shows weak physisorption of NO. To fully explore the mechanism of strengthening interactions between the substrate and NO, we discuss the changes in the electronic structure, which determines the electrical conductivity. We suggest that P-doped MoS2 is a suitable candidate for sensing NO polluting gas, while the chemisorption of NO on B-doped MoS2 is so strong that NO desorption is difficult. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:146 / 153
页数:8
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