Plasma -free Anisotropic Etching of GaN

被引：0
|
作者：
Chan, Clarence Y. [1 ]
Namiki, Shunya [1 ]
Hite, Jennifer K. [2 ]
Li, Xiuling [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Holonyak Micro & Nanotechnol Lab, Mat Res Lab, Urbana, IL 61801 USA
[2] US Naval Res Lab, High Power Elect Branch, Washington, DC 20375 USA
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate doping and growth dependent photo-enhanced metal -assisted chemical etching of homoepitaxial n-UaN on HVPE GaN substrates. Etch rate is comparable to or better than using RIE and there is no degradation of band-edge emission.
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页数：2
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