A passively Q-switched Yb:YAG microchip laser

被引：0
|
作者：
Spühler, GJ
Paschotta, R [1 ]
Kullberg, MP
Graf, M
Moser, M
Mix, E
Huber, G
Harder, C
Keller, U
机构：
[1] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] Ctr Suisse Elect & Microtech SA, CH-8048 Zurich, Switzerland
[3] Univ Hamburg, Inst Laser Phys, D-20355 Hamburg, Germany
[4] JDS Uniphase AG, CH-8045 Zurich, Switzerland
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 2001年 / 72卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present a diode-pumped passively Q-switched Yb:YAG microchip laser, using a semiconductor saturable absorber mirror. We obtained pulses with 1.1-muJ energy, 530-ps duration, 1.9-kW peak power, and a repetition rate of 12 kHz. The laser is oscillating in a single longitudinal mode.
引用
收藏
页码：285 / 287
页数：3
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