First-principles calculation of electronic polarization of III-V nanotubes

被引:9
|
作者
Otsuka, Jun [1 ]
Hirose, Kikuji [1 ]
Ono, Tomoya [1 ]
机构
[1] Osaka Univ, Dept Precis Sci & Technol, Suita, Osaka 5650871, Japan
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 03期
关键词
D O I
10.1103/PhysRevB.78.035426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A first-principles study of the electronic polarization of BN and AlN nanotubes and their graphitic sheets under an external electric field has been performed. We found that the polarization per atom of zigzag nanotubes increases with decreasing diameter while that of armchair nanotubes decreases. The variation of the polarization is related to the exterior angle of the bonds around the B or Al atoms rather than that around the N atoms. The increase in the polarization of the zigzag nanotubes with decreasing diameter is caused by the large variation of the exterior angle when they are wrapped into the tubular form. On the other hand, the decrease in the bond length results in the weak polarization of thin armchair nanotubes.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] First-principles band offsets of carbon nanotubes with III-V semiconductors
    Kim, YH
    Heben, MJ
    Zhang, SB
    Physics of Semiconductors, Pts A and B, 2005, 772 : 1031 - 1032
  • [2] Structural, mechanical, and electronic properties of 25 kinds of III-V binary monolayers: A computational study with first-principles calculation
    Liu, Xue-Fei
    Luo, Zi-Jiang
    Zhou, Xun
    Wei, Jie-Min
    Wang, Yi
    Guo, Xiang
    Lv, Bing
    Ding, Zhao
    CHINESE PHYSICS B, 2019, 28 (08)
  • [3] A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
    Scarrozza, M.
    Pourtois, G.
    Houssa, M.
    Caymax, M.
    Stesmans, A.
    Meuris, M.
    Heyns, M. M.
    MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1747 - 1750
  • [4] Studies on thermodynamic properties of III-V compounds by first-principles response-function calculation
    Wang, Shaoqing
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (07): : 1618 - 1627
  • [5] Structural and electronic properties of monolayer hydrogenated honeycomb III-V sheets from first-principles
    Wang, Yanli
    Shi, Siqi
    SOLID STATE COMMUNICATIONS, 2010, 150 (31-32) : 1473 - 1478
  • [6] First-principles studies of kinetics in epitaxial growth of III-V semiconductors
    Kratzer, P
    Penev, E
    Scheffler, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (01): : 79 - 88
  • [7] Dynamical behaviour in the boron III-V group: A first-principles study
    Touat, D.
    Ferhat, M.
    Zaoui, A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (15) : 3647 - 3654
  • [8] First-principles calculation of the piezoelectric tensor (d)over-left-right-arrow of III-V nitrides
    Bernardini, F
    Fiorentini, V
    APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4145 - 4147
  • [9] First-principles calculation of stable magnetic state and Curie temperature in transition metal doped III-V semiconductors
    Shahjahan, M.
    Razzakul, I. M.
    Rahman, M. M.
    COMPUTATIONAL CONDENSED MATTER, 2016, 9 : 67 - 71
  • [10] Dilute magnetic III-V semiconductor spintronics materials: A first-principles approach
    Das, GP
    Rao, BK
    Jena, P
    Kawazoe, Y
    COMPUTATIONAL MATERIALS SCIENCE, 2006, 36 (1-2) : 84 - 90