Phosphine oxide monolayers on SiO2 surfaces

被引：36
|
作者：
Yerushalmi, Roie [1 ,2 ]
Ho, Johnny C. [1 ,2 ]
Fan, Zhiyong [1 ,2 ]
Javey, Ali [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2008年 / 47卷 / 23期
关键词：
atomic force microscopy; hydrogen bonds; monolayers; phosphorus; surface chemistry;
D O I：
10.1002/anie.200800737
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
(Figure Presented) Getting a grip: H-bond formation is shown to be the main mode of interaction for monolayer formation of phosphine oxides on SiO 2 substrates (see images), with covalent reaction involved to a lesser extent. In contrast to the situation with the more widely studied polar phosphonic acids, formation of these monolayers is self-limiting. The results may have important implications for many applications based on phosphine oxide monolayers. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
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收藏
页码：4440 / 4442
页数：3
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