Modeling, Simulation, and Validation of a Power SiC BJT

被引：20
|
作者：
Gachovska, Tanya [1 ]
Hudgins, Jerry L. [1 ]
Bryant, Angus [2 ]
Santi, Enrico [3 ]
Mantooth, H. Alan [4 ]
Agarwal, Anant K. [5 ]
机构：
[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68508 USA
[2] Converteam UK Ltd, Rugby CV21 1BU, England
[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[4] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[5] Cree Inc, SiC Power Device R&D, Durham, NC 27703 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2012年 / 27卷 / 10期
关键词：
Silicon carbide (SiC) bipolar junction transistor (BJT); power semiconductor modeling; TRANSISTORS; MATLAB; DIODE;
D O I：
10.1109/TPEL.2012.2190622
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.
引用
收藏
页码：4338 / 4346
页数：9
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